? silikron semiconductor corporation 2010.12.10 version: 1.0 page 1of5 SSF1006A absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 200 a i d @t c =100 ? c continuous drain current,vgs@10v 130 i dm pulsed drain current 800 p d @t c =25 ? c power dissipation 326 w linear derating factor 1.5 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 960 mj e ar repetitive avalanche energy tbd mj dv/dt peak diode recovery voltage 31 v/ns t j t stg operating junction and storage temperature range ?55 to +1 75 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 0.46 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 4.7 5.5 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds =v gs ,i d =250 a i dss drain-to-source leakage current ? ? 2 a v ds =100v,v gs =0v ? ? 10 v ds =100v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v SSF1006A top view (d2pak) id =200a bv=100v rdson=4.7 m ? typ. feathers: ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF1006A is a new generation of high voltage and low current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF1006A is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor corporation 2010.12.10 version: 1.0 page 2of5 SSF1006A q g total gate charge ? 108 nc i d =30a,v gs =10v v dd =30v q gs gate-to-source charge ? 24 ? q gd gate-to-drain("miller") charge ? 37 ? t d(on) turn-on delay time ? 18.2 ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ? 15.6 t d(off) turn-off delay time ? 70.5 t f fall time ? 13.8 c iss input capacitance ? 3150 pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 350 c rss reverse transfer capacitance ? 240 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) ? ? 160 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) ? ? 520 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =60a,v gs =0v t rr reverse recovery time ? 57 ? ns t j =25 ? c,i f =75a di/dt=100a/ s q rr reverse recovery charge ? 107 ? c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) eas test circuit: gate charge test circuit: notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 50v,id=80a pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ?? starting tj = 25c
? silikron semiconductor corporation 2010.12.10 version: 1.0 page 3of5 SSF1006A switch time test circuit: switch waveform: transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature
? silikron semiconductor corporation 2010.12.10 version: 1.0 page 4of5 SSF1006A gate charge source-drain diode forward voltage safe operation area max drain current vs. junction transient thermal im p edance curve
? silikron semiconductor corporation 2010.12.10 version: 1.0 page 5of5 SSF1006A d2pak mechanical data:
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